cystech electronics corp. spec. no. : c820f3 issued date : 2011.12.01 revised date : 2011.12.16 page no. : 1/ 7 BTD1805F3 cystek product specification low vcesat npn epitaxial planar transistor BTD1805F3 description the device is manufactured in np n planar technology by using a ?bas e island? layout. the resulting transistor shows exceptional high gain performan ce coupled with very low saturation voltage. features ? very low collector-to-emitter saturation voltage ? fast switching speed ? high current gain characteristic ? large current capability ? rohs compliant package applications ? ccfl drivers ? voltage regulators ? relay drivers ? high efficiency low voltage switching applications symbol outline to-263 BTD1805F3 e emitter b base c collector b c e
cystech electronics corp. spec. no. : c820f3 issued date : 2011.12.01 revised date : 2011.12.16 page no. : 2/ 7 BTD1805F3 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage (i e =0) v cbo 150 v collector-emitter voltage (i b =0) v ceo 60 v emitter-base voltage (i c =0) v ebo 7 v collector current (dc) i c 7 collector current (pulse) i cp 12 (note 1) a base current i b 2 a power dissipation @ t a =25 p d 1.65 power dissipation @ t c =25 p d 40 w thermal resistance, junction to ambient r ja 75.8 c/w thermal resistance, junction to case r jc 3.125 c/w junction temperature tj 150 c storage temperature tstg -55~+150 c note : 1. single pulse , pw Q 380 s,duty Q 2%. characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 150 - - v i c =100 a, i e =0 *bv ceo 60 - - v i c =1ma, i b =0 bv ebo 7 - - v i c =100 a, i c =0 i cbo - - 100 na v cb =150v, i e =0 i ebo - - 100 na v eb =7v, i c =0 *v ce(sat) 1 - - 50 mv i c =100ma, i b =5ma *v ce(sat) 2 - 200 300 mv i c =2a, i b =50ma *v ce(sat) 3 - 240 320 mv i c =3a, i b =150ma *v ce(sat) 4 - - 400 mv i c =5a, i b =200ma *v be(sat) - 0.9 1.2 v i c =2a, i b =100ma *h fe 1 200 - 400 - v ce =2v, i c =100ma *h fe 2 100 - - - v ce =2v, i c =5a *h fe 3 40 - - - v ce =2v, i c =10a f t - 150 - mhz v ce =10v, i c =50ma cob - 50 - pf v cb =10v, f=1mhz t on - 50 - ns t stg - 1.35 - s t f - 120 - ns v cc =30v, i c =10i b 1=-10i b 2=1a, r l =30 *pulse test : pulse width 380 s, duty cycle 2%
cystech electronics corp. spec. no. : c820f3 issued date : 2011.12.01 revised date : 2011.12.16 page no. : 3/ 7 BTD1805F3 cystek product specification typical characteristics current gain vs collector current 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe vce=1v vce=2v saturation voltage vs collector current 1 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) ic=10ib ic=40ib ic=100ib vcesat saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vbesat@ic=10ib on voltage vs collector current 100 1000 1 10 100 1000 10000 collector current---ic(ma) on voltage---(mv) vbeon@vce=1v output characteristics 0 1 2 3 4 5 6 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=0 ib=2ma ib=4m a ib=8ma ib=20m a ib=12ma ib=16ma power derating curve 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(w)
cystech electronics corp. spec. no. : c820f3 issued date : 2011.12.01 revised date : 2011.12.16 page no. : 4/ 7 BTD1805F3 cystek product specification typical characteristics(cont.) power derating curve 0 5 10 15 20 25 30 35 40 45 0 50 100 150 200 case temeprature---tc() power dissipation---pd(w) ordering information device package shipping BTD1805F3 to-263 (pb-free lead plating) 800pcs / tape & reel recommended soldering footprint
cystech electronics corp. spec. no. : c820f3 issued date : 2011.12.01 revised date : 2011.12.16 page no. : 5/ 7 BTD1805F3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c820f3 issued date : 2011.12.01 revised date : 2011.12.16 page no. : 6/ 7 BTD1805F3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) 183 c 217 c ? time (t l ) 60-150 seconds 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c820f3 issued date : 2011.12.01 revised date : 2011.12.16 page no. : 7/ 7 BTD1805F3 cystek product specification to-263 dimension style : pin 1.base 2.collector 3.emitter 4.collector 3-lead plastic surface mounted package cystek package code : f3 marking : device name 4 year code: 92009, 0 2010,?, etc month code: 1jan, 2 feb,?,9 sep, a oct, b nov, c dec *:typical millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 4.060 4.830 0.160 0.190 e 8.380 9.400 0.330 0.370 a1 0.000 0.150 0.000 0.006 e *2.540 *0.100 b 1.170 1.400 0.046 0.055 e1 4.980 5.180 0.196 0.204 b 0.510 0.990 0.020 0.039 l 14.610 15.880 0.575 0.625 b1 1.140 1.400 0.045 0.055 l1 5.080 5.480 0.200 0.216 c 0.310 0.740 0.012 0.029 l2 2.290 2.790 0.090 0.110 c1 1.140 1.400 0.045 0.055 l3 1.270 1.780 0.050 0.070 d 9.650 10.310 0.380 0.406 v 5.600 ref 0.220 ref notes : 1.controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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